Intel to use Nanowire/Nanoribbon Transistors in Volume ‘in Five Years’

This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation, a number of new manufacturing technologies were discussed, including going beyond FinFET to Gate-All-Around structures, or even to 2D Nano-sheet structures, before eventually potentially leaving CMOS altogether. In the Q&A at the end of the presentation, Dr. Mayberry stated that he expects nanowire transistors to be in high volume production within five years, putting a very distinctive mark in the sand for Intel and others to reach.

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